The HMS065J010C2 is HeroMicro a high-performance 650V, 10A silicon carbide (SiC) Schottky barrier diode (SBD) in a TO-220-2L through-hole package. As a representative wide-bandgap semiconductor device, it offers zero reverse recovery current, ultra-fast switching, low switching losses, and excellent high-temperature stability, significantly outperforming traditional silicon fast-recovery diodes (FRDs). It is ideal for small-to-medium power, high-efficiency, high-frequency applications such as switch-mode power supplies (SMPS), power factor correction (PFC), motor drives, and EV charging systems.
1. Key Specifications (from HMS065J010C2.pdf)
Repetitive Peak Reverse Voltage (VRRM): 650 V
DC Blocking Voltage (VDC): 650 V
Continuous Forward Current (IF):
27 A (TC = 25°C)
13 A (Tj = 135°C)
10 A (Tj = 151°C, near max junction temperature)
Surge Forward Current (IFSM): 80 A (tp = 10 ms, half-sine)
Forward Voltage (VF):
Typ. 1.45 V (Max 1.70 V) @ IF = 10 A, Tj = 25°C
Typ. 1.75 V (Max 2.50 V) @ IF = 10 A, Tj = 175°C
Reverse Current (IR):
1 μA (typ.) @ VR = 650 V, Tj = 25°C
5 μA (typ.) @ VR = 650 V, Tj = 175°C
Total Capacitance (C): 534 pF @ VR = 0 V; 46 pF @ VR = 400 V
Total Capacitive Charge (QC): 28 nC @ VR = 400 V
Total Power Dissipation (PTOT): 105 W (TC = 25°C)
Thermal Resistance (Rth(j-c)): 1.43 °C/W (junction-to-case)
Operating Junction Temperature (Tj): –55°C to +175°C
Package: TO-220-2L (2-pin, with mounting hole, screw-mountable)
2. Key Advantages & Usage Guidelines
(1) Zero Reverse Recovery — Core Advantage for High Efficiency
As a majority-carrier device, the SiC SBD exhibits virtually zero reverse recovery current (Irr).
In PFC or hard-switched topologies, this dramatically reduces turn-on losses and EMI in main switches (MOSFETs/IGBTs)—especially beneficial at frequencies >100 kHz.
(2) Ultra-Low VF with Excellent High-Temp Performance
At 10 A and 25°C, VF is only 1.45 V (typ.), far lower than silicon FRDs (~2 V+).
Even at 175°C, VF remains ≤ 2.5 V, ensuring manageable conduction loss under harsh conditions.
(3) TO-220 Package Balances Performance and Cost
The TO-220-2L is a classic through-hole package that mounts to a heatsink via an M3 screw at 1 Nm torque.
With Rth(j-c) = 1.43 °C/W, at 10 A (VF ≈ 1.5 V, P ≈ 15 W), TJ is only ~21.5°C above TC—ideal for 300–1000 W designs.
(4) Positive Temperature Coefficient Enables Safe Paralleling
VF increases with temperature, allowing natural current sharing when paralleling devices—preventing thermal runaway.
(5) Extremely Low Leakage Ensures High Reliability
IR is only 5 μA (typ.) at 175°C (max 200 μA), minimizing standby loss in industrial and automotive applications.
(6) Layout Tip: Minimize Parasitic Inductance
Although Irr ≈ 0, junction capacitance (Cj) charging causes displacement current. In high di/dt circuits, keep traces between the diode and switch short to reduce loop inductance and suppress voltage overshoot.
3. Typical Applications
PFC diode in 300 W – 1 kW power supplies
Output rectifier or freewheeling diode in AC/DC SMPS
Clamping/freewheeling path in motor drives
Auxiliary power stages in EV onboard chargers (OBC)
Industrial control and telecom power modules
4. Summary
The HMS065J010C2 delivers an exceptional combination of 650V blocking, 10A high-temperature current rating, ultra-low VF, zero reverse recovery, 1.43 °C/W thermal resistance, and 175°C operation in a cost-effective TO-220 package. With proper heatsinking and layout optimization, it enables highly efficient, reliable, and compact power solutions for modern medium-power electronics.
