The HM540Z is HeroMicro an N-channel MOSFET built using advanced SGT (Split-Gate Trench) technology, delivering ultra-low on-resistance (RDS(ON)), low gate charge (Qg), and excellent thermal performance. With a 100 V drain-source voltage rating and 36 A continuous current capability (at TC = 25°C), it is ideal for medium-to-high power applications such as motor drives, DC-DC converters, inverters, and industrial power supplies.
1. Key Electrical Characteristics (TC = 25°C)
Drain-Source Voltage (VDS): 100 V
Gate-Source Voltage (VGS): ±20 V (absolute maximum)
Continuous Drain Current (ID): 36 A (TC = 25°C)
Pulsed Drain Current (IDM): 90 A (limited by junction temperature)
On-Resistance (RDS(ON)):
Typ. 13.8 mΩ (max 20 mΩ) @ VGS = 10 V, ID = 10 A
Typ. 17.4 mΩ (max 26 mΩ) @ VGS = 4.5 V, ID = 7 A
Total Gate Charge (Qg): 16.2 nC @ VGS = 10 V, VDS = 50 V
Gate Threshold Voltage (VGS(th)): 1.4 V to 2.5 V (@ ID = 250 μA)
Power Dissipation (PD): 71 W (TC = 25°C)
Thermal Resistance (RθJC): 1.76 °C/W (junction-to-case)
Operating Junction Temperature: -55°C to +150°C
Package: Not explicitly stated, but features “excellent package for good heat dissipation” — typically TO-220, TO-263 (D²PAK), or similar
2. Typical Applications
100V motor drives (e.g., e-bikes, industrial pumps, fans)
High-efficiency DC-DC buck/boost converters
Solar inverters and UPS systems
Primary or synchronous rectifier switches in server/telecom power supplies
High-side or low-side switches in battery management systems (BMS)
3. Design Considerations
Optimal Gate Drive:
Use VGS = 10 V for lowest RDS(ON) (<20 mΩ).
At VGS = 4.5 V (5V logic compatible), RDS(ON) remains below 26 mΩ—ideal for standard gate drivers or MCUs.
Never exceed ±20 V on the gate to avoid oxide breakdown.
Exceptional Thermal Performance:
With RθJC = 1.76°C/W, even 50 W of power raises TJ by only ~88°C above case temperature.
Mount the package’s thermal tab or backplate securely to a heatsink or large copper area to achieve rated 71 W dissipation.
High-Speed Switching:
Turn-on delay (td(on)): 16.6 ns
Turn-off delay (td(off)): 75.5 ns
Rise/fall times: tr = 3.8 ns, tf = 46 ns
Low Qg (16.2 nC) enables fast transitions:
Suitable for high-frequency operation (e.g., 100–300 kHz); manage EMI with proper layout.
Body Diode & Reverse Recovery:
Body diode forward voltage VSD = 1.3 V (@ IS = 12 A).
Reverse recovery: trr = 49 ns, Qrr = 61.8 nC (@ di/dt = 100 A/μs).
Evaluate recovery losses in hard-switching topologies; beneficial in soft-switching or synchronous rectification.
Avalanche Energy Rating:
Single-pulse avalanche energy EAS = 57 mJ (L = 0.3 mH, VDD = 50 V).
Offers inherent protection against inductive turn-off spikes, but clamping/snubber circuits are still recommended for robust designs.
Reliability & Environmental Compliance:
Available as a “Green Device” (RoHS compliant).
All ratings specified at TC = 25°C; apply thermal derating at elevated temperatures.
4. PCB Layout & Driving Tips
For TO-263 (D²PAK) packages, solder the exposed thermal pad to a large copper pour and use thermal vias to inner layers.
Keep gate drive traces short and away from high dV/dt nodes.
Add a 3–10 Ω series gate resistor to dampen ringing and control switching speed.
Place low-ESR ceramic bypass capacitors close to the drain-source supply path to minimize switching noise.
