The HM629 is HeroMicro a complementary dual MOSFET device integrating both N-channel and P-channel transistors in a single TO-252-4 (DPAK) package. Fabricated with advanced high-cell-density trench technology, it offers ultra-low on-resistance (RDS(ON)), low gate charge (Qg), and excellent thermal performance—making it well-suited for medium-power applications such as H-bridge motor drives, power switching, and battery protection.
1. Key Electrical Characteristics (TA = 25°C unless noted)
2. Typical Applications
H-bridge or half-bridge motor drivers (e.g., small power tools, fans, toy motors)
High-side / low-side load switches
Battery charge/discharge control and reverse polarity protection
Switching or synchronous rectifier in DC-DC converters
Bidirectional power management in portable systems
3. Design Considerations
Gate Drive Optimization:
N-channel: Use VGS = 10 V for lowest RDS(ON) (typ. 10 mΩ, max 13 mΩ); still <20 mΩ at 4.5 V.
P-channel: Drive with VGS = -10 V to achieve RDS(ON) < 40 mΩ (typ. ~30 mΩ).
Both channels are compatible with standard 3.3V/5V logic drivers.
Thermal Management:
Rated for 40 W power dissipation at TA = 25°C, but real-world performance depends heavily on PCB layout.
With RθJC = 3.1°C/W, junction temperature is calculated as TJ = TC + (PD × 3.1).
Solder the large thermal pad to a substantial copper area (≥6 cm² recommended) to maintain performance.
Switching Performance:
Turn-on delay (td(on)): 4 ns
Turn-off delay (td(off)): 18 ns
N-channel total gate charge Qg = 24 nC (@ VGS=10V, VDS=20V), enabling fast switching:
Suitable for medium-frequency PWM (e.g., ≤100 kHz); add gate resistance if EMI or ringing occurs.
Body Diode Characteristics:
Intrinsic body diode has VSD = 0.8 V typ. (max 1.2 V @ IS = 10 A), useful for freewheeling in inductive loads.
Ideal for natural commutation in H-bridge circuits.
Safe Operating Area (SOA):
Refer to the SOA curve (Fig. 12 in datasheet) to ensure safe operation under linear or short-circuit conditions.
Reliability & Environmental Compliance:
Compliant with green (RoHS) standards.
Dynamic parameters are specified at TC = 25°C; derate for elevated temperatures.
4. PCB Layout Recommendations
Typical TO-252-4 Pinout:
D1 (N-drain, connected to thermal pad)
G1 (N-gate)
S (common or separate source)
G2 (P-gate)
D2 (P-drain)
Connect the thermal pad to a large copper pour on top and/or inner layers for optimal heat spreading.
Keep gate traces short and away from high-current paths; add a 3–10 Ω series resistor if needed.
In H-bridge applications, always implement dead time to prevent shoot-through between N and P devices.
