The HM2300B is HeroMicro an N-channel MOSFET fabricated using advanced trench technology, offering ultra-low on-resistance (RDS(ON)), low gate charge (Qg), and excellent switching performance. It is ideal for low-voltage power applications such as battery-powered devices, load switching, DC-DC converters, and small motor drives. Packaged in a compact SOT-23 (marked “2300B”), it saves board space while delivering solid thermal and electrical performance.
1. Key Electrical Characteristics (TA = 25°C)
Drain-Source Voltage (VDS): 20 V
Gate-Source Voltage (VGS): ±12 V (absolute maximum)
Continuous Drain Current (ID): 5 A (at TC = 25°C)
Pulsed Drain Current (IDM): 16 A (limited by junction temperature)
On-Resistance (RDS(ON)):
Typ. 21 mΩ (max 25 mΩ) @ VGS = 4.5 V, ID = 4 A
Typ. 29 mΩ (max 44 mΩ) @ VGS = 2.5 V, ID = 3 A
Total Gate Charge (Qg): 5.5 nC @ VGS = 4.5 V, VDS = 10 V
Gate Threshold Voltage (VGS(th)): 0.4 V to 1.0 V (typ. 0.7 V, @ ID = 250 μA)
Power Dissipation (PD): 0.73 W (at TA = 25°C)
Thermal Resistance (RθJA): 171 °C/W
Operating Junction Temperature: -55°C to +150°C
Package: SOT-23
2. Typical Applications
Low-side load switches (e.g., LED drivers, USB power control)
Power management in portable electronics
Synchronous rectifier (low-side)
Small motor or relay drivers
Logic-level compatible switching (direct drive from 1.8V/3.3V/5V MCUs)
3. Design Considerations
Excellent Logic-Level Compatibility:
At VGS = 2.5 V, RDS(ON) remains below 44 mΩ—ideal for low-voltage microcontroller systems (e.g., ARM Cortex-M, ESP32).
Recommended drive range: 2.5 V to 4.5 V—no level shifter needed.
Ultra-Low Threshold Voltage:
VGS(th) as low as 0.4 V enables low-power turn-on but increases noise sensitivity.
Add a 100 kΩ pull-down resistor from gate to source to prevent unintended turn-on due to floating gate.
Thermal Management:
High RθJA (171°C/W) means even 0.5W of power raises junction temperature by 85°C above ambient.
For continuous operation, limit current to ≤2 A (at TA = 25°C).
Use ≥2 mm² copper area on drain and source pads to significantly improve thermal performance.
High-Speed Switching:
Turn-on delay (td(on)): 4 ns
Rise time (tr): 29 ns
Turn-off delay (td(off)): 47 ns
Extremely low Qg (5.5 nC) enables fast switching:
Suitable for high-frequency PWM (e.g., ≤500 kHz), but watch for EMI and ringing.
Body Diode Characteristics:
Intrinsic body diode has VSD ≤ 1.2 V (@ IS = 4 A), useful for freewheeling.
Maximum continuous body diode current: 5 A.
4. PCB Layout Recommendations
SOT-23 Pinout (top view, marking facing up):
Pin 1: G (Gate)
Pin 2: S (Source)
Pin 3: D (Drain)
Connect source (S) directly to system ground.
Keep drain (D) trace short and wide for load/power connection.
Route gate trace short and straight; add a 10–33 Ω series resistor if high-frequency oscillation occurs.
