The HMS065J020H2 is HeroMicro a high-performance 650V, 20A silicon carbide (SiC) Schottky barrier diode (SBD) in a TO-247-2L through-hole package. As a wide-bandgap semiconductor device, it delivers zero reverse recovery current, ultra-fast switching, low switching losses, and excellent high-temperature stability, significantly outperforming traditional silicon fast-recovery diodes (FRDs). It is ideal for medium-power, high-efficiency, high-frequency applications such as switch-mode power supplies (SMPS), power factor correction (PFC), motor drives, and EV charging systems.
1. Key Specifications (from HMS065J020H2.pdf)
Repetitive Peak Reverse Voltage (VRRM): 650 V
DC Blocking Voltage (VDC): 650 V
Continuous Forward Current (IF):
50 A (TC = 25°C)
25 A (Tj = 135°C)
20 A (Tj = 148°C, near max junction temperature)
Surge Forward Current (IFSM): 165 A (tp = 10 ms, half-sine)
Forward Voltage (VF):
Typ. 1.40 V (Max 1.70 V) @ IF = 20 A, Tj = 25°C
Typ. 1.60 V (Max 2.50 V) @ IF = 20 A, Tj = 175°C
Reverse Current (IR):
2 μA (typ.) @ VR = 650 V, Tj = 25°C
10 μA (typ.) @ VR = 650 V, Tj = 175°C
Total Capacitance (C): 1392 pF @ VR = 0 V; 109 pF @ VR = 400 V
Total Capacitive Charge (QC): 69 nC @ VR = 400 V
Total Power Dissipation (PTOT): 176 W (TC = 25°C)
Thermal Resistance (Rth(j-c)): 0.85 °C/W (junction-to-case)
Operating Junction Temperature (Tj): –55°C to +175°C
Package: TO-247-2L (2-pin, with mounting hole, screw-mountable)
2. Key Advantages & Usage Guidelines
(1) Zero Reverse Recovery — Dramatically Lower Switching Losses
As a majority-carrier device, the SiC SBD exhibits virtually zero reverse recovery current (Irr).
In PFC or hard-switched topologies, this reduces turn-on losses and EMI in main switches (MOSFETs/IGBTs)—boosting system efficiency by 1–3%, especially at frequencies >100 kHz.
(2) Ultra-Low VF with Excellent High-Temperature Performance
At 20 A and 25°C, VF is only 1.40 V (typ.), far lower than silicon FRDs (~2 V+).
Even at 175°C, VF remains ≤ 2.5 V, ensuring manageable conduction loss under high-temperature operation.
(3) TO-247 Package Enables Superior Thermal Management
The metal tab mounts directly to a heatsink using an M3 screw at 1 Nm torque, ensuring low thermal resistance.
With Rth(j-c) = 0.85 °C/W, at 20 A (VF ≈ 1.5 V, P ≈ 30 W), TJ is only ~25.5°C above TC—ideal for high-power-density designs.
(4) Positive Temperature Coefficient Supports Parallel Operation
VF increases with temperature, enabling natural current sharing when paralleling devices—preventing thermal runaway.
(5) Extremely Low Leakage Current, Even at High Temperature
IR is only 10 μA (typ.) at 175°C (max 300 μA), minimizing standby loss in high-reliability systems.
(6) No Reverse Recovery ≠ No Switching Transients
Although Irr ≈ 0, junction capacitance (Cj) charging still causes displacement current. In high di/dt circuits, optimize PCB layout (short traces, low parasitic inductance) to suppress voltage overshoot.
3. Typical Applications
650V PFC boost diode (for 2–5 kW power supplies)
High-frequency rectifier in server/telecom PSUs
Freewheeling/clamping diode in PV microinverters
Braking circuits in industrial motor drives
Auxiliary stages in EV onboard chargers (OBC)
4. Summary
The HMS065J020H2 combines 650V blocking, 20A high-temperature current rating, ultra-low VF, zero reverse recovery, 0.85 °C/W thermal resistance, and 175°C operation into a robust TO-247 package. With proper heatsinking and system-level design, it enables highly efficient, reliable, and compact power solutions for next-generation medium-power electronics.
