The HMS120J002D2 is HeroMicro a high-performance 1200V, 2A silicon carbide (SiC) Schottky barrier diode (SBD) in a compact TO-252-2L (DPAK) surface-mount package. As a representative wide-bandgap semiconductor device, it offers zero reverse recovery current, ultra-fast switching, low switching losses, and excellent high-temperature stability, making it ideal for small-to-medium power, high-efficiency applications such as switch-mode power supplies (SMPS), power factor correction (PFC), motor drives, and charging systems.
1. Key Specifications (from HMS120J002D2.pdf)
Repetitive Peak Reverse Voltage (VRRM): 1200 V
DC Blocking Voltage (VDC): 1200 V
Continuous Forward Current (IF):
8.5 A (TC = 25°C)
3.9 A (Tj = 135°C)
2 A (Tj = 155°C, near max junction temperature)
Surge Forward Current (IFSM): 27 A (tp = 10 ms, half-sine)
Forward Voltage (VF):
Typ. 1.40 V (Max 1.80 V) @ IF = 2 A, Tj = 25°C
Typ. 2.05 V (Max 2.70 V) @ IF = 2 A, Tj = 175°C
Reverse Current (IR):
1 μA (typ.) @ VR = 1200 V, Tj = 25°C
2 μA (typ.) @ VR = 1200 V, Tj = 175°C
Total Capacitance (C): 140 pF @ VR = 0 V; 9.5 pF @ VR = 800 V
Total Capacitive Charge (QC): 12 nC @ VR = 800 V
Total Power Dissipation (PTOT): 52 W (TC = 25°C)
Thermal Resistance (Rth(j-c)): 2.9 °C/W (junction-to-case)
Operating Junction Temperature (Tj): –55°C to +175°C
Package: TO-252-2L (2-pin, SMT, tape & reel, 2500 pcs/reel)
2. Key Advantages & Usage Guidelines
(1) Zero Reverse Recovery — Ideal for High-Frequency Operation
As a majority-carrier device, the SiC SBD exhibits virtually zero reverse recovery current (Irr).
In PFC or hard-switched topologies, this reduces turn-on losses and EMI in main switches (e.g., MOSFETs)—especially beneficial at frequencies >100 kHz.
(2) Ultra-Low Leakage with Stable High-Temp Performance
Reverse leakage remains only ~2 μA at 175°C (max 40 μA), ensuring minimal standby loss in high-reliability, low-power systems.
(3) TO-252 Package Relies on PCB for Thermal Management
The TO-252 (DPAK) is a standard SMT package without an external heatsink—thermal performance depends entirely on PCB design.
With Rth(j-c) = 2.9 °C/W, at 2 A (VF ≈ 1.5 V, P ≈ 3 W), TJ is only ~8.7°C above TC.
Solder the exposed tab to a large copper pour with multiple thermal vias to inner ground planes—otherwise, continuous current capability will be severely limited.
(4) Positive Temperature Coefficient Enables Safe Paralleling
VF increases with temperature, allowing natural current sharing when paralleling devices—preventing thermal runaway in redundant or higher-current designs.
(5) Low Parasitic Capacitance for Cleaner Switching
Total capacitance is only 9.5 pF @ 800 V, with QC = 12 nC—resulting in lower displacement current and reduced voltage overshoot during fast switching, simplifying snubber design.
3. Typical Applications
Low-power PFC diode (<500 W)
Output rectifier in AC/DC adapters or LED drivers
Freewheeling/clamping diode in auxiliary or bias supplies
Control boards for small motor drives
Power stages in telecom equipment and industrial sensors
4. Summary
The HMS120J002D2 combines 1200V blocking, 2A high-temperature current rating, zero reverse recovery, ultra-low leakage, 2.9 °C/W thermal resistance, and 175°C operation into a compact, cost-effective SMD package. With proper PCB thermal layout and high-frequency optimization, it delivers exceptional efficiency, reliability, and performance in modern low-to-medium power electronics.
