The HMS120J005D2 is HeroMicro a high-performance 1200V, 5A silicon carbide (SiC) Schottky barrier diode (SBD) in a compact TO-252-2L (DPAK) surface-mount package. As a wide-bandgap semiconductor device, it offers zero reverse recovery current, ultra-fast switching, low switching losses, and excellent high-temperature stability, significantly outperforming traditional silicon fast-recovery diodes (FRDs). It is ideal for small-to-medium power, high-efficiency, high-frequency applications such as switch-mode power supplies (SMPS), power factor correction (PFC), motor drives, and EV charging systems.
1. Key Specifications (from HMS120J005D2.pdf)
Repetitive Peak Reverse Voltage (VRRM): 1200 V
DC Blocking Voltage (VDC): 1200 V
Continuous Forward Current (IF):
17 A (TC = 25°C)
8 A (Tj = 135°C)
5 A (Tj = 155°C, near max junction temperature)
Surge Forward Current (IFSM): 55 A (tp = 10 ms, half-sine)
Forward Voltage (VF):
Typ. 1.40 V (Max 1.80 V) @ IF = 5 A, Tj = 25°C
Typ. 2.00 V (Max 2.70 V) @ IF = 5 A, Tj = 175°C
Reverse Current (IR):
1 μA (typ.) @ VR = 1200 V, Tj = 25°C
2 μA (typ.) @ VR = 1200 V, Tj = 175°C
Total Capacitance (C): 353 pF @ VR = 0 V; 20 pF @ VR = 800 V
Total Capacitive Charge (QC): 27 nC @ VR = 800 V
Total Power Dissipation (PTOT): 85 W (TC = 25°C)
Thermal Resistance (Rth(j-c)): 1.75 °C/W (junction-to-case)
Operating Junction Temperature (Tj): –55°C to +175°C
Package: TO-252-2L (2-pin, surface-mount)
2. Key Advantages & Usage Guidelines
(1) Zero Reverse Recovery — Near-Zero Switching Losses
As a majority-carrier device, the SiC SBD exhibits virtually zero reverse recovery current (Irr).
In PFC or hard-switched topologies, this dramatically reduces turn-on losses and EMI in main switches (MOSFETs/IGBTs)—especially beneficial at high frequencies (>100 kHz).
(2) Ultra-Low Leakage Even at High Temperature
Reverse leakage remains only ~2 μA at 175°C (max 100 μA), far lower than silicon counterparts—ensuring minimal standby loss in high-reliability systems.
(3) TO-252 Package Suited for Medium-Power Applications
The TO-252 (DPAK) is a standard SMT package that requires no heatsink for several amps, but relies on PCB copper for cooling.
With Rth(j-c) = 1.75 °C/W, at 5 A (VF ≈ 1.5 V, P ≈ 7.5 W), TJ is only ~13°C above TC.
Solder the exposed tab to a large copper pour with multiple thermal vias to inner ground planes—otherwise, current capability drops significantly.
(4) Positive Temperature Coefficient Enables Parallel Operation
VF increases with temperature, allowing natural current sharing when paralleling devices—preventing thermal runaway.
(5) No Reverse Recovery ≠ No Switching Transients
Although Irr ≈ 0, junction capacitance (Cj) charging still causes displacement current. In high di/dt circuits, optimize PCB layout (short traces, low parasitic inductance) to suppress voltage overshoot.
3. Typical Applications
PFC diode in<1 kW power supplies
Output rectifier in AC/DC or DC/DC SMPS
Freewheeling/clamping diode in motor drives
Auxiliary power in EV onboard chargers (OBC)
Industrial control and telecom power modules
4. Summary
The HMS120J005D2 delivers an exceptional combination of 1200V blocking, 5A high-temperature current rating, zero reverse recovery, ultra-low leakage, 1.75 °C/W thermal resistance, and 175°C operation. With proper PCB thermal design and layout, it enables highly efficient, reliable, and compact power solutions for modern medium-power electronics.
