The HMS120J020H2 is HeroMicro a high-performance 1200V silicon carbide (SiC) Schottky barrier diode (SBD) in a TO-247-2L package. As a next-generation wide-bandgap semiconductor device, it offers zero reverse recovery current, ultra-fast switching, low switching losses, and excellent high-temperature stability, significantly outperforming traditional silicon fast-recovery diodes (FRDs). It is widely used in high-efficiency, high-frequency, high-power-density applications such as switch-mode power supplies (SMPS), power factor correction (PFC), motor drives, EV charging stations, and solar inverters.
1. Key Specifications (from HMS120J020H2.pdf)
Repetitive Peak Reverse Voltage (VRRM): 1200 V
DC Blocking Voltage (VDC): 1200 V
Continuous Forward Current (IF):
55 A (TC = 25°C)
25 A (Tj = 135°C)
20 A (Tj = 149°C, near max junction temperature)
Surge Forward Current (IFSM): 180 A (tp = 10 ms, half-sine)
Forward Voltage (VF):
Typ. 1.45 V (Max 1.80 V) @ IF = 20 A, Tj = 25°C
Typ. 2.20 V (Max 2.70 V) @ IF = 20 A, Tj = 175°C
Reverse Current (IR):
2 μA (typ.) @ VR = 1200 V, Tj = 25°C
15 μA (typ.) @ VR = 1200 V, Tj = 175°C
Total Capacitance (C): 1453 pF @ VR = 0 V; 72 pF @ VR = 800 V
Total Capacitive Charge (QC): 102 nC @ VR = 800 V
Total Power Dissipation (PTOT): 220 W (TC = 25°C)
Thermal Resistance (Rth(j-c)): 0.68 °C/W (junction-to-case, industry-leading)
Operating Junction Temperature (Tj): –55°C to +175°C
Package: TO-247-2L (2-pin, with mounting hole)
2. Key Advantages & Usage Guidelines
(1) Zero Reverse Recovery — Dramatically Lower Switching Losses
As a majority-carrier device, the SiC SBD exhibits virtually zero reverse recovery current (Irr).
In PFC or hard-switched topologies, this reduces turn-on losses and EMI in switches (IGBTs/MOSFETs), boosting system efficiency by 1–3%.
(2) Positive Temperature Coefficient — Natural Current Sharing
VF increases with temperature, enabling automatic current balancing when paralleling multiple diodes—preventing thermal runaway and simplifying high-power designs.
(3) Exceptional High-Temperature Performance
Maximum junction temperature of +175°C exceeds standard silicon devices (typically 150°C), ideal for harsh environments or simplified thermal management.
(4) TO-247-2L Package Optimized for Heat Dissipation
The metal tab mounts directly to a heatsink using an M3 screw at 1 Nm torque.
With Rth(j-c) = 0.68 °C/W, at 20 A (VF ≈ 1.5 V, P ≈ 30 W), the junction is only ~20°C hotter than the case—minimizing cooling requirements.
(5) Reverse Leakage Increases with Temperature
While IR is only 2 μA at 25°C, it rises to 15–300 μA at 175°C. Evaluate its impact on standby power or high-impedance control circuits in high-temp operation.
(6) No Reverse Recovery ≠ No Switching Transients
Although Irr ≈ 0, junction capacitance (Cj) charging/discharging still causes displacement current. In high di/dt applications, optimize PCB layout (short traces, low parasitic inductance) to suppress voltage overshoot.
3. Typical Applications
PFC boost diode: Replaces FRDs to achieve >98% efficiency
Freewheeling/clamping diode in PV/ESS inverters
On-board chargers (OBC) and DC-DC converters in EVs
Braking/regeneration circuits in industrial motor drives
High-frequency rectification in server/telecom PSUs
4. Summary
The HMS120J020H2 stands out with its 1200V rating, 20A high-temperature current capability, zero reverse recovery, ultra-low 0.68 °C/W thermal resistance, and +175°C operating temperature. When combined with careful layout, robust thermal design, and system-level optimization, it enables a new generation of highly efficient, compact, and reliable power electronic systems.
