The IRFR9024NTR is HeroMicro a high-performance P-channel power MOSFET built using advanced high-cell-density trench technology. Designed for medium-power switching applications such as load control, battery management, and power path selection, it features –60V blocking voltage, –13A continuous drain current, low on-resistance (<90 mΩ @ VGS=–10V), and low gate charge, making it suitable for automotive, industrial, and portable electronics.
1. Key Specifications (from IRFR9024NTR.pdf)
Drain-Source Voltage (VDS): –60 V
Continuous Drain Current (ID): –13 A (limited by max junction temperature)
Pulsed Drain Current (IDM): –54 A (pulse width limited by TJ)
On-Resistance RDS(ON):
<90 mΩ (typ.) @ VGS = –10 V, ID = –10 A
Gate Threshold Voltage (VGS(th)): –1 to –2.5 V (typical)
Body Diode Forward Voltage (VSD): ≤ –1.2 V @ ISD = –10 A
Reverse Recovery Time (trr): 34 ns (@ IF=–10A, dI/dt=100A/μs)
Reverse Recovery Charge (Qrr): 37 nC (same conditions)
Package: TO-252 (DPAK), surface-mount with exposed tab
Packing: 2500 pcs/reel
Environmental: Green (lead-free) option available
Note: Power dissipation (PD) and thermal resistance (RθJA/RθJC) are not explicitly stated in the provided excerpt, but typical TO-252 performance relies heavily on PCB thermal design.
2. Key Usage Guidelines
(1) Ideal for High-Side Switching
P-channel MOSFETs are naturally suited for high-side configurations (source to V+, drain to load), eliminating the need for bootstrap circuits.
Turn on when VGS ≤ –|VGS(th)| (typically ≤ –2.5 V); full enhancement requires VGS = –10 V.
(2) Logic-Level Drive Requires Level Shifting
While RDS(ON) < 90 mΩ at VGS = –10 V, it increases significantly at VGS = –4.5 V.
For 3.3V/5V MCU control, use an NPN transistor or level-shifter circuit to pull the gate low enough for reliable conduction.
(3) TO-252 Thermal Performance Depends on PCB Layout
The TO-252 (DPAK) package’s current capability is highly dependent on copper area and thermal vias.
Without enhanced cooling, derate continuous current (e.g., limit to 8–10 A above 50°C ambient).
Solder the exposed tab to a large ground copper pour with multiple thermal vias to inner layers for effective heat sinking.
(4) Body Diode Is Standard Recovery—Not for High-Frequency Use
Qrr = 37 nC and trr = 34 ns indicate a standard recovery body diode, unsuitable for high-frequency synchronous rectification.
Acceptable for freewheeling in low-frequency inductive loads (relays, small motors), but consider adding an external fast diode in switch-mode applications.
(5) Respect Absolute Maximum Ratings
Do not exceed –60 V VDS (including transients).
–54 A IDM is for short pulses only—not for continuous operation.
3. Typical Applications
Automotive: Battery disconnect or main power switch
Industrial: High-side load driver in PLC output modules
Portable devices: Battery pack charge/discharge path control
Redundant power selector in servers/telecom equipment
High-side switch in non-synchronous DC-DC converters
4. Summary
The IRFR9024NTR offers a cost-effective, reliable solution for medium-power high-side switching with its –60V/–13A rating,<90 mΩ RDS(ON), and compact TO-252 package. When implemented with proper gate driving, robust PCB thermal design, and operational derating, it delivers stable and efficient performance across automotive, industrial, and consumer applications.
