The FDP52N20 is HeroMicro a high-voltage N-channel power MOSFET built using advanced high-cell-density trench technology. With 200V blocking voltage, 40A continuous current, ultra-low on-resistance (typ. 50 mΩ, max 60 mΩ @ VGS=10V), and exceptional thermal performance, it is engineered for medium-power high-voltage switching applications such as SMPS, motor drives, inverters, industrial controls, and lighting systems.
1. Key Specifications (from FDP52N20.pdf)
Drain-Source Voltage (VDS): 200 V
Continuous Drain Current (ID): 40 A (TC=25°C), 28 A (TC=100°C)
On-Resistance (RDS(ON)):
Typ. 50 mΩ (Max 60 mΩ) @ VGS=10V, ID=20A
Gate Threshold Voltage (VGS(th)): 2–4 V (@ ID=250 μA)
Total Gate Charge (Qg): 162 nC (@ VGS=10V, VDS=160V, ID=40A)
Input Capacitance (Ciss): 3139 pF (@ VDS=25V, f=1MHz)
Switching Characteristics (VDS=100V, ID=40A, RG=25Ω):
td(on): 34 ns, tr: 59 ns
td(off): 100 ns, tf: 94 ns
Body Diode:
VSD ≤ 1.4 V @ IS=40A
trr: 250 ns, Qrr: 2 nC
Single-Pulse Avalanche Energy (EAS): 605 mJ (industry-leading)
Package: TO-220 (through-hole with metal tab)
Power Dissipation (PD): 220 W (TC=25°C)
Thermal Resistance: RθJC = 0.63 °C/W (excellent)
Operating Junction Temperature: –55°C to +175°C
Environmental: Green (lead-free) option available
2. Key Usage Guidelines
(1) Ideal for Medium-Power High-Voltage Applications
Covers typical offline SMPS bus voltages (e.g., 170–180 VDC after rectification).
Conduction loss at 40 A ≈ 80 W—well below 220 W rating, offering good design margin.
(2) High Gate Charge Requires Strong Drive
Qg = 162 nC demands a robust gate driver (peak current ≥2 A recommended).
Use RG ≈ 25 Ω as baseline; optimize between 10–33 Ω for EMI vs. switching loss trade-off.
Keep gate loop short and low-inductance to prevent ringing.
(3) Exceptional Thermal Performance
RθJC = 0.63 °C/W is among the best available—mount the TO-220 tab securely to a heatsink.
+175°C junction rating enables operation in harsh environments, but long-term reliability depends on thermal management.
(4) Industry-Leading Avalanche Robustness
605 mJ EAS provides outstanding tolerance to inductive turn-off stress—ideal for driving motors, relays, or transformers without additional clamping in well-designed systems.
(5) Standard Body Diode—Not for Synchronous Rectification
trr = 250 ns is too slow for high-frequency synchronous rectification.
Acceptable as a freewheeling diode in hard-switched converters, but avoid in resonant topologies.
(6) Safe Operating Area (SOA)
Refer to SOA curve (Fig. 8); avoid sustained operation above 150 V and 20 A simultaneously to prevent secondary breakdown.
3. Typical Applications
General-purpose AC-DC SMPS (100–300 W flyback/forward converters)
Industrial motor drives (fans, pumps, small servos)
Solar micro-inverters and DC-AC stages
HID electronic ballasts
UPS and battery charger DC-DC stages
4. Summary
The FDP52N20 sets a high bar in medium-power high-voltage switching with its 200V/40A rating, 50 mΩ RDS(ON), record 605 mJ avalanche energy, ultra-low 0.63 °C/W thermal resistance, and +175°C junction temperature capability. When implemented with proper gate driving, effective heatsinking, and SOA-aware design, it delivers robust, long-life performance in industrial, energy, and consumer power systems.
