The G100C04D52 is HeroMicro a high-performance dual-channel MOSFET integrating both an N-channel and a P-channel device in a single package, fabricated using advanced trench technology. Designed for applications requiring complementary switching—such as motor control, battery protection, power path selection, and H-bridge drivers—it delivers ultra-low on-resistance, compact footprint, and excellent thermal performance in space-constrained, high-efficiency systems.
1. Key Specifications (from G100C04D52.pdf)
N-Channel:
VDS: +40 V
ID: 28 A (TC=25°C), 19.8 A (TC=100°C)
RDS(ON):
Typ. 10 mΩ (Max 13 mΩ) @ VGS=10V, ID=15A
Typ. 13 mΩ (Max 20 mΩ) @ VGS=4.5V, ID=10A
P-Channel:
VDS: –40 V
ID: –20 A (TC=25°C), –16 A (TC=100°C)
RDS(ON):
Typ. 40 mΩ (Max 45 mΩ) @ VGS=–10V, ID=–8A
Typ. 55 mΩ (Max 65 mΩ) @ VGS=–4.5V, ID=–4A
Shared Features:
VGS(th): N: 1–2 V; P: –1 to –2.5 V (@ ID=250 μA)
Qg: N: 22.9 nC (@10V); P: 9 nC (@–4.5V)
PD: 35 W (N), 31.3 W (P)
Package: DFN 5×6-8 (leadless, exposed pad, 5.0 mm × 6.0 mm)
TJ Range: –55°C to +150°C
RθJA: 62 °C/W (PCB-dependent)
2. Key Usage Guidelines
(1) Ideal for Half-Bridge / H-Bridge Circuits
The N+P pair enables single-supply H-bridge or half-bridge designs without bootstrap circuits, simplifying gate drive.
Perfect for bidirectional motor control, battery charge/discharge FETs, and load switches.
(2) Logic-Level Compatible
N-channel turns on fully at 4.5 V (RDS(ON) < 20 mΩ); P-channel at –4.5 V (RDS(ON) < 65 mΩ).
Can be driven directly from 3.3V/5V logic with simple level-shifting or dedicated dual drivers.
For high-side P-MOS, ensure sufficient |VGS| even when source floats.
(3) Thermal Design Is Critical
All heat exits through the exposed pad—must be soldered to a large copper area (≥4 cm²) with multiple thermal vias.
Without proper PCB heatsinking, continuous current must be significantly derated.
(4) Low Qg Enables High-Speed Switching
Ultra-low gate charge (22.9 nC N, 9 nC P) supports fast switching (N: tr=14 ns, tf=12 ns) and high-frequency operation (>100 kHz).
(5) Body Diode Characteristics
N-diode: VSD ≤ 1.2 V @ 15 A; P-diode: VSD ≤ –1 V @ –1 A.
Suitable for freewheeling in low-power inductive loads, but avoid hard-switching high-current recirculation due to unspecified recovery behavior.
3. Typical Applications
Battery pack charge/discharge FET pair (BMS) in portable devices
Small DC motor H-bridge drivers (toys, robotics, cooling fans)
USB Type-C power path selection and overvoltage protection
Low-voltage synchronous buck POL converters
Bidirectional switches in industrial I/O modules
4. Summary
The G100C04D52 stands out with its integrated N+P architecture, 40V/28A & 20A ratings, ultra-low RDS(ON), compact DFN package, and logic-level compatibility. When paired with robust PCB thermal design and appropriate gate driving, it provides a highly integrated, efficient, and reliable solution for bidirectional power control in consumer electronics, IoT, and industrial systems.