The FHP80N08A is HEROMICRO a high-performance N-channel power MOSFET fabricated using advanced high-cell-density trench technology. With 82V blocking voltage, 95A continuous current, ultra-low on-resistance (typ. 6.6 mΩ, max 8 mΩ @ VGS=10V), and exceptional thermal performance, it is engineered for high-efficiency, high-current medium-voltage applications such as server power supplies, DC-DC converters, motor drives, inverters, power tools, and renewable energy systems.
1. Key Specifications (from FHP80N08A.pdf)
Drain-Source Voltage (VDS): 82 V
Continuous Drain Current (ID): 95 A (TC=25°C), 57 A (TC=100°C)
Pulsed Drain Current (IDM): 320 A
On-Resistance (RDS(ON)):
Typ. 6.6 mΩ (Max 8 mΩ) @ VGS=10V, ID=20A
Gate Threshold Voltage (VGS(th)): 2–4 V (@ ID=250 μA)
Total Gate Charge (Qg): 109.3 nC (@ VGS=10V, VDS=40V, ID=50A)
Input Capacitance (Ciss): 6800 pF (@ VDS=25V, f=1MHz)
Switching Characteristics (VDD=40V, RG=15Ω):
td(on): 18 ns, tr: 12 ns
td(off): 56 ns, tf: 15 ns
Body Diode:
VSD ≤ 1.2 V @ IS=95A
trr: 37 ns, Qrr: 58 nC
Single-Pulse Avalanche Energy (EAS): 529 mJ
Package: TO-220 (through-hole with metal tab)
Power Dissipation (PD): 170 W (TC=25°C)
Thermal Resistance: RθJC = 0.88 °C/W
Operating Junction Temperature: –55°C to +175°C (industry-leading)
Environmental: Green (lead-free) option available
2. Key Usage Guidelines
(1) Ultra-Low RDS(ON) for Maximum Efficiency
Only ~59.6 W conduction loss at 95 A (P = I²R), enabling >97% efficiency in POL converters.
Requires VGS = 10 V drive (not logic-level compatible due to VGS(th) ≥ 2 V).
(2) High Gate Charge Demands Strong Drive
Large Qg (109.3 nC) and Ciss (6800 pF) require a dedicated gate driver IC.
Use RG ≈ 15 Ω as baseline; optimize between 5–22 Ω for EMI vs. switching loss trade-off.
Keep gate loop short and away from high di/dt paths to prevent ringing.
(3) Exceptional Thermal Performance
RθJC = 0.88 °C/W is among the best in class—mount the TO-220 tab securely to a heatsink.
+175°C junction rating allows operation in harsh environments, but long-term reliability still depends on thermal design.
(4) Fast Body Diode for Synchronous Rectification
trr = 37 ns and Qrr = 58 nC make it suitable as a synchronous rectifier or freewheeling switch in buck/full-bridge topologies.
(5) Industry-Leading Avalanche Robustness
529 mJ EAS provides outstanding tolerance to inductive turn-off stress—ideal for motor and relay driving.
(6) Safe Operating Area (SOA)
Refer to SOA curve (Fig. 8); avoid sustained operation above 60 V and 50 A simultaneously to prevent thermal runaway.
3. Typical Applications
Server/telecom VRMs and POL converters
High-power synchronous DC-DC converters (buck/boost)
BLDC motor drives (power tools, fans, pumps)
Solar micro-inverters and MPPT controllers
Industrial UPS and battery charge/discharge systems
4. Summary
The FHP80N08A sets a new benchmark in medium-voltage power switching with its 82V/95A rating, 6.6 mΩ RDS(ON), record 529 mJ avalanche energy, ultra-low 0.88 °C/W thermal resistance, and +175°C junction temperature capability. When paired with robust gate driving, effective heatsinking, and SOA-aware design, it delivers unmatched performance and reliability in demanding industrial, computing, and energy applications.
