The FQP47P06 is a high-performance P-channel power MOSFET built using advanced trench technology, designed for high-side switching, battery protection, power ORing, and motor control applications. Key strengths include -60V blocking voltage, -40A continuous current, ultra-low on-resistance (typ. 22 mΩ @ VGS = -10V), and excellent thermal performance, making it an ideal choice for efficient and robust medium-power P-channel switching.
1. Key Specifications (from FQP47P06.pdf)
Drain-Source Voltage (VDS): -60 V
Continuous Drain Current (ID): -40 A (TC=25°C), -25 A (TC=100°C)
Pulsed Drain Current (IDM): -150 A
On-Resistance (RDS(ON)):
Typ. 22 mΩ (Max 28 mΩ) @ VGS = -10V, ID = -8A
Typ. 26 mΩ (Max 35 mΩ) @ VGS = -4.5V, ID = -6A
Gate Threshold Voltage (VGS(th)): -1 to -2.5 V (@ ID = -250 μA)
Total Gate Charge (Qg): 43.8–88 nC (@ VGS = -10V, VDS = -30V, ID = -5A)
Input Capacitance (Ciss): 2550–3850 pF (@ VDS = -25V, f = 1MHz)
Switching Characteristics (VDD = -30V, ID = -1A, RG = 6Ω):
td(on): 25–50 ns, tr: 13.8–28 ns
td(off): 148–290 ns, tf: 51–100 ns
Body Diode:
VSD ≤ -1 V @ IS = -1A
Continuous Source Current (IS): -40 A
Package: TO-220 (through-hole with metal tab)
Power Dissipation (PD): 89 W (TC=25°C)
Thermal Resistance: RθJC = 1.4 °C/W; RθJA = 62 °C/W
Operating Junction Temperature: –55°C to +150°C
Environmental: Green (lead-free) option available
2. Key Usage Guidelines
(1) P-Channel Drive Logic
Requires negative VGS (gate voltage lower than source) to turn on.
Optimal drive at VGS = -10V for lowest RDS(ON). Still efficient at -4.5V, suitable for 5V systems with level-shifting.
Cannot be driven directly by 3.3V/5V logic—use a gate driver or level translator.
(2) Low Conduction Loss & Thermal Design
At -40 A, conduction loss ≈ 35 W—well below 89 W rating.
TO-220 package must be mounted on a heatsink. With RθJC = 1.4 °C/W, even modest heatsinks ensure safe operation.
(3) High Input Capacitance Demands Strong Drive
Large Ciss (3850 pF) and Qg (88 nC) require a low-impedance gate driver (e.g., dedicated MOSFET driver IC).
Use RG ≈ 6 Ω as reference; too high increases switching loss, too low may cause ringing.
(4) Long Turn-Off Delay—Mind Dead Time
td(off) up to 290 ns necessitates adequate dead time in bridge circuits (e.g., H-bridge) to prevent shoot-through.
(5) Safe Operating Area & Pulsed Rating
-150 A IDM supports motor inrush or fault conditions.
Refer to SOA curve (Fig. 6); avoid sustained high |VDS| and high |ID| simultaneously.
3. Typical Applications
High-side power switch in battery-powered systems (laptops, UPS)
Power path selection and ORing circuits
H-bridge motor drivers (paired with N-channel MOSFETs)
Electronic loads or current-limiting circuits
Reverse polarity protection in industrial controls
4. Summary
The FQP47P06 stands out among P-channel MOSFETs with its -60V/-40A rating, 22 mΩ RDS(ON), 89 W power handling, and thermally efficient TO-220 package. When paired with proper gate driving, heatsinking, and dead-time management, it delivers reliable, high-efficiency performance in demanding power switching and motor control applications.
