The HGN095NE4S is HeroMicro a high-performance N-channel power MOSFET built using advanced Split-Gate Trench (SGT) technology. With ultra-low on-resistance, high current capability, and excellent thermal performance, it is engineered for high-efficiency, high-current low-voltage applications such as server power supplies, DC-DC converters, motor drives, battery management systems (BMS), power tools, and automotive electronics.
1. Key Specifications (from HGN095NE4S.pdf)
Drain-Source Voltage (VDS): 40 V
Continuous Drain Current (ID): 50 A (TC=25°C), 35 A (TC=100°C)
Pulsed Drain Current (IDM): 200 A
On-Resistance (RDS(ON)):
Typ. 5.5 mΩ (Max 6.5 mΩ) @ VGS=10V, ID=20A
Typ. 8 mΩ (Max 10 mΩ) @ VGS=4.5V, ID=15A
Gate Threshold Voltage (VGS(th)): 1–2 V (@ ID=250 μA)
Total Gate Charge (Qg): 12 nC (@ VGS=10V, VDS=20V, ID=20A)
Input Capacitance (Ciss): 660 pF (@ VDS=20V, f=1MHz)
Switching Characteristics (VDS=20V, ID=20A, RG=3Ω):
td(on): 6.8 ns, tr: 2.8 ns
td(off): 27.3 ns, tf: 3.7 ns
Body Diode:
VSD ≤ 1.2 V @ ISD=20A
trr: 40 ns, Qrr: 22 nC
Single-Pulse Avalanche Energy (EAS): 52 mJ
Package: DFN 5×6-8 (leadless, exposed pad, 5.0 mm × 6.0 mm)
Power Dissipation (PD): 44 W (TC=25°C)
Thermal Resistance: RθJC = 2.8 °C/W
Operating Junction Temperature: –55°C to +150°C
Environmental: Green (lead-free) option available
2. Key Usage Guidelines
(1) Ultra-Low RDS(ON) for High Efficiency
Only ~13.75 W conduction loss at 50 A (P = I²R), enabling >95% efficiency in POL converters.
Logic-level compatible: RDS(ON) < 10 mΩ at VGS = 4.5 V—direct drive from MCUs possible.
(2) High-Speed Switching Demands Careful Layout
Extremely fast switching (tr/tf < 4 ns) causes high di/dt and ringing.
Critical PCB practices:
Minimize gate loop area
Add 1–3 Ω gate resistor to damp oscillations
Use wide copper traces or planes for power paths
(3) Thermal Management Is Essential
Low RθJC (2.8 °C/W) requires the exposed pad to be soldered to a large copper area (≥6 cm²) with multiple thermal vias.
Without proper heatsinking, 50 A continuous operation will cause thermal runaway.
(4) Fast Body Diode for Synchronous Rectification
trr = 40 ns and Qrr = 22 nC make it ideal as the low-side switch in synchronous buck converters, reducing dead-time losses.
(5) Safe Operation & Pulsed Capability
200 A IDM supports motor inrush or fault conditions.
52 mJ EAS provides moderate avalanche robustness—avoid repetitive avalanche stress.
3. Typical Applications
Server/telecom VRMs (Voltage Regulator Modules)
High-current synchronous buck converters (e.g., 12V→1V CPU/GPU rails)
Brushless DC motor drives in power tools
Battery pack charge/discharge FETs (BMS)
Automotive 12V systems (start-stop, EPS)
4. Summary
The HGN095NE4S sets a benchmark in low-voltage power switching with its 40V/50A rating, 5.5 mΩ RDS(ON), 12 nC Qg, compact DFN package, and superior thermal performance. When paired with optimized PCB layout and robust thermal design, it delivers unmatched efficiency and power density for next-generation computing, industrial, and automotive applications.
