The HM05NG-C is HeroMicro a high-voltage N-channel power MOSFET fabricated using advanced high-cell-density trench technology, designed for low-to-medium-power applications such as switch-mode power supplies (SMPS), LED drivers, home appliance controls, and industrial auxiliary power modules. Key strengths include 500V blocking voltage, low on-resistance (RDS(ON) < 1500 mΩ @ VGS=10V), ultra-low gate charge, and fast switching—making it ideal for cost-effective, efficient power conversion.
1. Key Specifications (from HM05NG-C.pdf)
Drain-Source Voltage (VDS): 500 V
Continuous Drain Current (ID): 5 A (TC=25°C), 2.6 A (TC=100°C)
Pulsed Drain Current (IDM): 20 A
On-Resistance (RDS(ON)):
Typ. 1415 mΩ (Max 1500 mΩ) @ VGS=10V, ID=40A* (*for characterization only; continuous ID = 5A)
Gate Threshold Voltage (VGS(th)): 2–4 V (@ ID=250 μA)
Total Gate Charge (Qg): 12 nC (@ VGS=10V, VDS=400V, ID=5A)
Input Capacitance (Ciss): 414 pF (@ VDS=25V, f=1MHz)
Switching Characteristics (VDS=250V, ID=5A, RG=25Ω):
td(on): 6 ns, tr: 21 ns
td(off): 14 ns, tf: 22 ns
Body Diode:
VSD ≤ 1.2 V @ ISD=5A
trr: 289 ns
Single-Pulse Avalanche Energy (EAS): 167 mJ
Package: TO-252 (DPAK, surface-mount with thermal pad)
Power Dissipation (PD): 24.5 W (TC=25°C)
Thermal Resistance: RθJC = 4.2 °C/W; RθJA = 48.2 °C/W
Operating Junction Temperature: –55°C to +150°C
Environmental: Green (lead-free) option available
2. Key Usage Guidelines
(1) Gate Drive & High-Frequency Operation
Drive with VGS = 10 V for optimal conduction.
Ultra-low Qg (12 nC) and fast switching (tr/tf ~20 ns) enable efficient operation up to 200 kHz.
Tested with RG = 25 Ω—adjust between 10–33 Ω based on EMI requirements.
(2) Thermal Management
Solder the exposed thermal pad to a large copper area (≥2.5 cm²) with thermal vias.
At 5 A, conduction loss (~35 W) exceeds PD rating (24.5 W)—5 A is only sustainable with excellent heatsinking at low ambient temperatures.
Derate current per Fig. 10 (Max Drain Current vs. Case Temp). Use RθJC (4.2 °C/W) for junction temperature estimation.
(3) Body Diode Considerations
Moderate trr (289 ns) may cause voltage overshoot in hard-switching topologies (e.g., flyback).
Add an RC snubber or TVS clamp on the drain for robustness in inductive applications.
(4) Avalanche Robustness
High EAS (167 mJ) ensures good tolerance to inductive turn-off stress (e.g., relays, small fans).
Switching parameters are “essentially independent of operating temperature,” enhancing stability.
(5) Safe Operating Area (SOA)
Refer to SOA curve (Fig. 9); avoid sustained operation above 400 V and 2 A simultaneously.
Pulsed mode (≤300 μs, ≤2% duty) allows full 20 A IDM.
3. Typical Applications
Low-power AC-DC SMPS (10–30 W flyback converters)
LED driver primary switches
Home appliance standby/auxiliary power (AC units, refrigerators)
Industrial sensor power modules
Battery chargers
4. Summary
The HM05NG-C delivers exceptional performance with its 500V rating, 5A current capability, ultra-low Qg (12 nC), and fast switching in a thermally efficient TO-252 package. With proper drive, rigorous thermal design, and SOA compliance, it enables highly efficient, reliable, and compact power solutions for consumer and industrial applications.
