The HM4N60D2 is HeroMicro a high-voltage N-channel power MOSFET built using advanced trench technology, designed for low-to-medium-power applications such as switch-mode power supplies (SMPS), LED drivers, adapters, and industrial controls. Key strengths include 600V blocking voltage, low on-resistance (RDS(ON) < 2.5 Ω @ VGS=10V), low gate charge, and robust avalanche capability—making it ideal for reliable, cost-effective power conversion.
1. Key Specifications (from HM4N60D2.pdf)
Drain-Source Voltage (VDS): 600 V
Continuous Drain Current (ID): 4 A (TC=25°C), 2.5 A (TC=100°C)
Pulsed Drain Current (IDM): 16 A
On-Resistance (RDS(ON)):
Typ. 2.0 Ω (Max 2.5 Ω) @ VGS=10V, ID=2A
Rises sharply to ~50–60 Ω at VGS=4.5V
Gate Threshold Voltage (VGS(th)): 2–4 V (@ ID=250 μA)
Total Gate Charge (Qg): 27–30 nC (@ VGS=10V, VDS=480V, ID=4A)
Input Capacitance (Ciss): 710–920 pF (@ VDS=25V, f=1MHz)
Switching Characteristics (VDD=300V, ID=4A, RG=25Ω):
td(on): 20–50 ns, tr: 55–120 ns
td(off): 70–150 ns, tf: 55–120 ns
Body Diode:
VSD ≤ 1.4 V @ IS=4A
trr: 330 ns
Single-Pulse Avalanche Energy (EAS): 240 mJ
Package: TO-252 (DPAK, surface-mount with thermal pad)
Power Dissipation (PD): 51 W (TC=25°C)
Thermal Resistance: RθJC = 2.5 °C/W; RθJA = 83 °C/W
Operating Junction Temperature: –55°C to +150°C
Environmental: Green (lead-free) option available
2. Key Usage Guidelines
(1) Drive Voltage Must Be ≥10 V
RDS(ON) is unacceptably high (~50 Ω) at VGS = 4.5 V—not logic-level compatible.
Always drive with VGS = 10–15 V for minimal conduction loss.
Tested with RG = 25 Ω—suitable for<100 kHz operation.
(2) Thermal Management Is Critical
Solder the exposed thermal pad to a large copper area (≥3 cm²) with thermal vias.
At 4 A, conduction loss can reach ~32 W—close to the 51 W limit.
Use RθJC (2.5 °C/W) for accurate junction temperature estimation.
(3) Slow Body Diode Requires Snubber
Long trr (330 ns) causes significant voltage overshoot in hard-switching topologies (e.g., flyback).
Strongly recommend an RC snubber or TVS clamp on the drain for reliability.
(4) Excellent Avalanche Robustness
High EAS (240 mJ) ensures superior tolerance to inductive turn-off stress (e.g., relays, small motors).
Avoid repetitive avalanche operation despite high rating.
(5) Safe Operating Area (SOA)
Refer to SOA curve; avoid sustained operation above 500 V and 2 A simultaneously.
Pulsed mode (≤300 μs, ≤2% duty) allows full 16 A IDM.
3. Typical Applications
Low-power AC-DC SMPS (5–25 W flyback converters)
LED driver primary switches
Standby power supplies in consumer electronics
Industrial auxiliary power modules
Battery chargers
4. Summary
The HM4N60D2 offers exceptional value with its 600V rating, 4A current capability, and industry-leading 240 mJ avalanche energy in a thermally efficient TO-252 package. By ensuring ≥10 V gate drive, optimizing PCB thermal design, and adding drain-side protection, designers can achieve highly reliable, long-life power solutions for consumer and industrial markets.
