The HM5DN06 is HeroMicro a dual N-channel MOSFET integrated into a single SOP-8 package, leveraging advanced high-cell-density trench technology. With ultra-low on-resistance, low gate charge, and fast switching, it is ideal for space-constrained applications requiring dual switches or half-bridge topologies, such as DC-DC converters, load switches, motor drivers, and portable power management.
1. Key Specifications (from HM5DN06.pdf)
Drain-Source Voltage (VDS): 60 V
Continuous Drain Current (ID): 4.5 A (TA=25°C), 3.5 A (TA=70°C)
Pulsed Drain Current (IDM): 18 A
On-Resistance (RDS(ON)):
Typ. 30 mΩ (Max 36 mΩ) @ VGS=10V, ID=4A
Typ. 34 mΩ (Max 45 mΩ) @ VGS=4.5V, ID=3A
Gate Threshold Voltage (VGS(th)): 1–2.5 V (@ ID=250 μA)
Total Gate Charge (Qg): 19 nC (@ VGS=10V, VDS=48V, ID=4A)
Input Capacitance (Ciss): 1020 pF (@ VDS=15V, f=1MHz)
Switching Characteristics (VDD=30V, ID=4A, RG=3.3Ω):
td(on): 3 ns, tr: 34 ns
td(off): 23 ns, tf: 6 ns
Body Diode:
VSD ≤ 1.2 V @ IS=1A
trr: 12.1 ns, Qrr: 6.7 nC
Single-Pulse Avalanche Energy (EAS): 22 mJ
Package: SOP-8 (surface-mount with exposed thermal pad)
Power Dissipation (PD): 1.5 W (TA=25°C)
Thermal Resistance: RθJA = 85 °C/W; RθJC = 25 °C/W
Operating Junction Temperature: –55°C to +150°C
Environmental: Green (lead-free) option available
2. Key Usage Guidelines
(1) Dual Independent or Half-Bridge Use
Contains two isolated N-MOSFETs (G1/D1/S1 and G2/D2/S2).
Ideal for dual load switches, half-bridge drivers (with bootstrap), or synchronous buck pairs.
Note: Shared package causes thermal coupling—limit total power when both channels conduct simultaneously.
(2) Logic-Level Drive Compatibility
Low VGS(th) (1–2.5 V) and low RDS(ON) at 4.5 V enable direct drive from 5V microcontrollers—no dedicated driver needed.
Ultra-fast switching (tf = 6 ns) demands short gate traces and optional 1–10 Ω gate resistor to suppress ringing.
(3) Thermal Management
Limited PD (1.5 W) requires careful thermal design.
Solder the exposed pad to a large copper area (≥2 cm²) with thermal vias.
Derate current above TA = 50°C per Safe Operating Area (Fig. 8).
(4) Ultra-Fast Body Diode
Extremely low trr (12.1 ns) and Qrr (6.7 nC) minimize recovery loss—excellent for high-frequency synchronous rectification.
(5) Safe Operating Area (SOA)
Narrow DC SOA (Fig. 8)—avoid linear-mode operation (e.g., constant-current loads).
Use 18 A IDM only under short pulses (≤300 μs, ≤2% duty).
3. Typical Applications
Dual 5V/12V load switches in portable devices
Low-power synchronous Buck converters (<20 W)
USB power distribution and overcurrent protection
Small DC fan or haptic motor H-bridge drivers
Battery pack charge/discharge control
4. Summary
The HM5DN06 combines dual-channel integration, ultra-low RDS(ON), 5V logic compatibility, and an ultra-fast body diode in a compact SOP-8 package. With proper PCB thermal layout and SOA compliance, it delivers high efficiency and miniaturization for consumer and industrial power applications.
