The HM10N50 is HeroMicro a high-voltage N-channel power MOSFET fabricated using advanced trench technology, designed for medium-power applications such as switch-mode power supplies (SMPS), LED drivers, industrial controls, and home appliance power modules. Key strengths include 500V blocking voltage, low on-resistance (RDS(ON) < 700 mΩ @ VGS=10V), low gate charge, and robust thermal performance—making it ideal for cost-effective, reliable power conversion.
1. Key Specifications (from HM10N50.pdf)
Drain-Source Voltage (VDS): 500 V
Continuous Drain Current (ID): 10 A (TC=25°C), 5.7 A (TC=100°C)
Pulsed Drain Current (IDM): 36 A
On-Resistance (RDS(ON)):
Typ. 650 mΩ (Max 700 mΩ) @ VGS=10V, ID=4.5A
Gate Threshold Voltage (VGS(th)): 2–4 V (@ ID=250 μA)
Total Gate Charge (Qg): 27 nC (@ VGS=10V, VDS=400V, ID=9A)
Input Capacitance (Ciss): 1011 pF (@ VDS=25V, f=1MHz)
Switching Characteristics (VDS=250V, ID=9A, RG=25Ω):
td(on): 24 ns, tr: 94 ns
td(off): 54 ns, tf: 59 ns
Body Diode:
VSD ≤ 1.3 V @ ISD=9A
trr: 200 ns
Single-Pulse Avalanche Energy (EAS): 190 mJ
Package: TO-252 (DPAK, surface-mount with thermal pad)
Power Dissipation (PD): 30 W (TC=25°C)
Thermal Resistance: RθJC = 1.88 °C/W; RθJA = 62.5 °C/W
Operating Junction Temperature: –55°C to +150°C
Environmental: Green (lead-free) option available
2. Key Usage Guidelines
(1) Gate Drive & Switching
Drive with VGS = 10 V for optimal conduction and minimal conduction loss.
Low Qg (27 nC) enables efficient operation up to ~150 kHz.
Tested with RG = 25 Ω—reduce slightly for faster switching, but monitor EMI and ringing.
(2) Thermal Management
Solder the exposed thermal pad to a large copper area (≥3 cm²) with multiple thermal vias.
Derate current at high case temperatures per Fig. 10.
Use RθJC (1.88 °C/W) for accurate junction temperature estimation.
(3) Body Diode Considerations
Moderate trr (200 ns) may cause voltage overshoot in hard-switching topologies (e.g., flyback).
Add an RC snubber or TVS clamp on the drain for protection in inductive applications.
(4) Avalanche Robustness
High EAS (190 mJ) ensures good tolerance to inductive turn-off stress (e.g., relays, small motors).
Switching parameters are “essentially independent of operating temperature,” enhancing stability.
(5) Safe Operating Area (SOA)
Refer to SOA curve (Fig. 9); avoid sustained operation above 400 V and 4 A simultaneously.
Pulsed mode (≤300 μs, ≤2% duty) allows full 36 A IDM.
3. Typical Applications
Medium-power AC-DC SMPS (30–100 W flyback/forward converters)
LED driver primary switches
Home appliance power modules (microwave, washing machine)
Industrial auxiliary power supplies and motor drives
Battery chargers
4. Summary
The HM10N50 offers an excellent balance of 500V rating, 10A current capability, low RDS(ON), and low gate charge in a thermally efficient TO-252 package. With proper drive, thermal layout, and SOA compliance, it delivers high efficiency and reliability in a wide range of consumer and industrial power applications.
