70V/70A Ultra-Low RDS(ON) N-Channel Trench MOSFET —— HM008NG Usage Guide

The HM008NG is HeroMicro an N-channel power MOSFET built using advanced high-cell-density trench technology, optimized for high-efficiency, high-current switching applications. With ultra-low on-resistance (RDS(ON) < 8.5 mΩ @ VGS=10V), low gate charge, and excellent thermal performance, it is ideal for motor drives, DC-DC converters, power management, power tools, and industrial controls.

1. Key Specifications (from HM008NG.pdf)

  • Drain-Source Voltage (VDS): 70 V

  • Continuous Drain Current (ID): 70 A (TC=25°C), 52 A (TC=100°C)

  • Pulsed Drain Current (IDM): 320 A

  • On-Resistance (RDS(ON)):

    • Typ. 7.5 mΩ (Max 8.5 mΩ) @ VGS=10V, ID=30A

  • Gate Threshold Voltage (VGS(th)): 2–4 V (Typ. 3 V @ ID=250 μA)

  • Total Gate Charge (Qg): 35 nC (@ VGS=10V, VDS=30V, ID=30A)

  • Input Capacitance (Ciss): 3900 pF (@ VDS=30V, f=1MHz)

  • Switching Characteristics (VDS=30V, ID=30A, RG=3Ω):

    • td(on): 15 ns, tr: 90 ns

    • td(off): 45 ns, tf: 30 ns

  • Body Diode:

    • VSD ≤ 1.2 V @ IS=30A

    • trr: 78 ns, Qrr: 51 nC

  • Single-Pulse Avalanche Energy (EAS): 110 mJ

  • Package: TO-220 (through-hole, metal tab = drain)

  • Power Dissipation (PD): 103 W

  • Thermal Resistance (RθJC): 1.46 °C/W

  • Junction Temperature Range: –55°C to +175°C

  • Environmental: Green (lead-free) option available

2. Key Usage Guidelines

(1) Gate Drive & High-Frequency Operation

Drive with VGS = 10 V for minimum RDS(ON).

Excellent FOM (RDS(ON) × Qg) enables efficient operation up to 300 kHz.

Tested with RG = 3 Ω—adjust between 2–10 Ω based on EMI requirements.

(2) Thermal Management

Ultra-low RθJC (1.46 °C/W) supports 103 W dissipation—mount the metal tab to a heatsink with thermal paste.

Monitor case temperature under continuous high-current loads to ensure TJ ≤ 175°C.

(3) Body Diode for Synchronous Rectification

Low VSD (1.2 V) and fast trr (78 ns) make it suitable for synchronous rectifiers or freewheeling paths.

Reduces dead-time loss in half-bridge/H-bridge topologies.

(4) Avalanche Capability

Rated for 110 mJ single-pulse avalanche energy—suitable for small inductive loads.

Add TVS or snubber for enhanced robustness in harsh environments.

(5) Safe Operating Area (SOA)

Wide DC and pulsed SOA (Fig. 9) supports linear-mode operation.

Use 320 A IDM only under short pulses (≤300 μs, ≤0.5% duty).

3. Typical Applications

12V/24V/48V high-current DC-DC converters (Buck main switch or sync rectifier)

Power tool motor drives (H-bridge low-side)

BMS battery charge/discharge switches

Industrial load switches

Server VRM synchronous rectification

4. Summary

The HM008NG delivers exceptional performance with its 70V rating, 70A current capability, and <8.5 mΩ RDS(ON). Leveraging advanced trench technology, it enables highly efficient, compact power designs. With proper drive, thermal, and layout practices, it is a reliable choice for demanding high-current applications.

Relevant content