The HM13N50 is HeroMicro a high-voltage N-channel power MOSFET fabricated using advanced planar technology, designed for medium-power applications such as switch-mode power supplies (SMPS), inverters, motor drives, and industrial controls. Key strengths include 500V blocking voltage, low on-resistance (RDS(ON) < 500 mΩ @ VGS=10V), low gate charge, and robust thermal performance—making it ideal for reliable, efficient power conversion.
1. Key Specifications (from HM13N50.pdf)
Drain-Source Voltage (VDS): 500 V
Continuous Drain Current (ID): 13 A (TA=25°C), 7.9 A (TA=100°C)
Pulsed Drain Current (IDM): 52 A
On-Resistance (RDS(ON)):
Typ. 450 mΩ (Max 500 mΩ) @ VGS=10V, ID=6.5A
Gate Threshold Voltage (VGS(th)): 2–4 V (@ ID=250 μA)
Total Gate Charge (Qg): 49 nC (@ VGS=10V, VDS=400V, ID=13A)
Input Capacitance (Ciss): 1679 pF (@ VDS=25V, f=1MHz)
Switching Characteristics (VDS=250V, ID=13A, RG=25Ω):
td(on): 39 ns, tr: 139 ns
td(off): 124 ns, tf: 84 ns
Body Diode:
VSD ≤ 1.4 V @ ISD=13A
trr: 420 ns
Single-Pulse Avalanche Energy (EAS): 500 mJ
Package: TO-252 (DPAK, surface-mount with thermal pad)
Power Dissipation (PD): 50 W (TA=25°C)
Thermal Resistance: RθJC = 2.5 °C/W; RθJA = 62.5 °C/W
Operating Junction Temperature: –55°C to +150°C
2. Key Usage Guidelines
(1) Gate Drive & Protection
Drive with VGS = 10 V for optimal conduction.
Absolute max VGS = ±30 V—add a 15–18 V Zener or TVS diode from gate to source for overvoltage protection.
Use RG = 10–50 Ω (tested at 25 Ω) to balance switching speed and EMI.
(2) Thermal Management
Solder the thermal pad to a large copper area (≥3 cm²) with multiple thermal vias.
Derate current at high ambient temperatures per Fig. 5.
Use RθJC (not RθJA) for accurate junction temperature estimation.
(3) Body Diode Limitations
Long trr (420 ns) causes significant recovery loss in hard-switching topologies.
Avoid relying on the body diode for freewheeling in bridge circuits; consider external fast diodes.
(4) Avalanche Robustness
Rated for 500 mJ single-pulse avalanche energy—suitable for inductive loads.
Add an RC snubber or TVS clamp on the drain for enhanced reliability.
(5) Safe Operating Area (SOA)
Refer to SOA curve (Fig. 6); avoid sustained operation at high VDS (>400 V) and high ID (>5 A).
Pulsed mode (≤300 μs, ≤2% duty) allows full 52 A IDM.
3. Typical Applications
SMPS primary switches (flyback, forward converters)
Industrial motor drive inverters (low-side)
Power control in electric tools
High-side switching in LED drivers
Appliance power modules (e.g., air conditioners, washing machines)
4. Summary
The HM13N50 offers a robust solution for 500V, medium-current switching applications with proven planar technology and efficient TO-252 packaging. With proper gate protection, thermal design, and SOA adherence, it delivers long-term reliability and stable performance in demanding power systems.
