The HM60P50 is HeroMicro a P-channel enhancement-mode power MOSFET built using advanced trench technology, designed for high-current load switching and power management applications. Key strengths include ultra-low on-resistance (RDS(ON) < 28 mΩ @ VGS = –10 V), high avalanche energy rating (EAS = 722 mJ), and excellent thermal performance. It is ideal for battery protection, load switches, motor control, and industrial power systems.
1. Key Specifications (from HM60P50.pdf)
Drain-Source Voltage (VDS): –60 V
Continuous Drain Current (ID): –50 A (TC=25°C), –35 A (TC=100°C)
Pulsed Drain Current (IDM): –150 A
On-Resistance (RDS(ON)):
Typ. 23 mΩ, Max 28 mΩ @ VGS = –10 V, ID = –20 A
Gate Threshold Voltage (VGS(th)): –2 V to –3.5 V (Typ. –2.6 V)
Total Gate Charge (Qg): 75 nC (@ VDS = –30 V, ID = –20 A)
Input Capacitance (Ciss): 6460 pF (@ VDS = –25 V)
Switching Characteristics (VDD = –30 V, RL = 1.5 Ω, RG = 3 Ω):
td(on): 15 ns, tr: 17 ns
td(off): 40 ns, tf: 45 ns
Body Diode:
VSD ≤ –1.2 V @ IS = –20 A
trr: 50 ns
Package: TO-252-2L (surface-mount with thermal pad)
Power Dissipation (PD): 95 W (TC=25°C)
Thermal Resistance (RθJC): 1.31 °C/W
Junction Temperature Range: –55°C to +150°C
Reliability: 100% UIS tested, 100% ΔVDS tested
2. Key Usage Guidelines
(1) P-Channel Drive Considerations
To turn on, the gate must be driven lower than the source. For example, with source at +12V, pull gate to 0V or below 2V (depending on VGS(th)).
Use VGS = –10 V for minimum RDS(ON).
Ideal for high-side switching without bootstrap circuitry.
(2) Thermal Management & PCB Layout
Solder the exposed thermal pad to a large copper area (≥2 cm²) with multiple thermal vias.
With 95 W max power, ensure TJ ≤ 150°C through thermal simulation.
Low RθJC (1.31 °C/W) enables efficient heat transfer.
(3) Avalanche & Reliability
Rated for 722 mJ single-pulse avalanche energy—suitable for inductive loads (motors, relays).
Consider adding TVS or flyback diodes for enhanced robustness.
(4) Switching Speed & EMI
Fast switching (<50 ns) supports 50–200 kHz operation.
Adjust RG (typically 3–10 Ω) to control ringing and EMI.
(5) Safe Operating Area (SOA)
Refer to SOA curve (Fig. 8) to avoid thermal runaway under high |VDS| and |ID|.
3. Typical Applications
High-side battery load switches (BMS)
Automotive power distribution
High-side drivers in H-bridge motor control
Inverters and UPS systems
Server hot-swap power control
4. Summary
The HM60P50 delivers robust performance as a –60V, –50A P-channel MOSFET with ultra-low RDS(ON), high avalanche capability, and efficient TO-252 thermal packaging. With proper gate drive logic, thermal design, and SOA adherence, it enables reliable, compact, and high-efficiency high-side switching solutions for demanding power applications.
