The CEU4269 is HeroMicro a high-performance dual-channel MOSFET integrating both an N-channel and a P-channel device in a single package, fabricated using advanced trench technology. Designed for applications requiring complementary switching—such as motor control, battery protection, power path selection, and H-bridge drivers—it delivers ultra-low on-resistance, low gate charge, and excellent switching performance in space-constrained, high-efficiency systems.
1. Key Specifications (from CEU4269.pdf)
N-Channel:
VDS: +40 V
ID: 20 A (TC=25°C), 12 A (TC=100°C)
RDS(ON):
Typ. 17 mΩ (Max 25 mΩ) @ VGS=10V, ID=8A
Typ. 25 mΩ (Max 35 mΩ) @ VGS=4.5V, ID=5A
P-Channel:
VDS: –40 V
ID: –12 A (TC=25°C), –7 A (TC=100°C)
RDS(ON):
Typ. 30 mΩ (Max 40 mΩ) @ VGS=–10V, ID=–5A
Typ. 42 mΩ (Max 52 mΩ) @ VGS=–4.5V, ID=–4A
Shared Features:
VGS(th): N: 1–2.5 V; P: –1.2 to –2.5 V (@ ID=250 μA)
Qg: N: 12 nC (@8V); P: 9 nC (@–4.5V)
PD: 28 W (N), 20 W (P)
Package: Pinout D1/G1/D2/S1/S2/G2 (likely dual independent or common-source)
TJ Range: –55°C to +150°C
RθJC: 4.5 °C/W (N), 6 °C/W (P)
2. Key Usage Guidelines
(1) Ideal for Half-Bridge / H-Bridge Circuits
The N+P pair enables single-supply H-bridge or half-bridge designs without bootstrap circuits, simplifying gate drive.
Perfect for bidirectional motor control, battery charge/discharge FETs, and load switches.
(2) Logic-Level Compatible
N-channel turns on fully at 4.5 V (RDS(ON) < 35 mΩ); P-channel at –4.5 V (RDS(ON) < 52 mΩ).
Can be driven directly from 3.3V/5V logic with simple level-shifting or dedicated dual drivers.
For high-side P-MOS, ensure sufficient |VGS| even when source floats.
(3) Low Qg Enables High-Speed Switching
Ultra-low gate charge (12 nC N, 9 nC P) supports fast switching (N: tr=3 ns, tf=2 ns) and high-frequency operation (>100 kHz).
(4) Body Diode Characteristics
N-diode: VSD ≤ 1.2 V @ 3 A; P-diode: VSD ≤ –1.0 V @ –1 A.
Suitable for freewheeling in low-power inductive loads.
(5) Thermal Design
RθJC of 4.5 °C/W (N) and 6 °C/W (P) indicates good thermal conduction.
Evaluate need for heatsinking based on power dissipation and ambient conditions.
3. Typical Applications
Battery pack charge/discharge FET pair (BMS) in portable devices
Small DC motor H-bridge drivers (toys, robotics, cooling fans)
USB Type-C power path selection and overvoltage protection
Low-voltage synchronous buck POL converters
Bidirectional switches in industrial I/O modules
4. Summary
The CEU4269 stands out with its integrated N+P architecture, 40V/20A & 12A ratings, ultra-low RDS(ON), low Qg, and logic-level compatibility. When paired with robust gate driving and appropriate thermal management, it provides a highly integrated, efficient, and reliable solution for bidirectional power control in consumer electronics, IoT, and industrial systems
