The HM018N10T is HeroMicro an N-channel power MOSFET built using advanced Super Trench technology, optimized for high-efficiency, high-frequency power conversion. With an ultra-low on-resistance (RDS(ON) < 3.0 mΩ @ VGS=10V), low gate charge (Qg = 158 nC), and excellent switching performance, it is ideal for synchronous rectification, high-current DC-DC converters, server VRMs, industrial motor drives, and power tools.
1. Key Specifications (from HM018N10T.pdf)
Drain-Source Voltage (VDS): 100 V
Continuous Drain Current (ID): 180 A (TC=25°C), 128 A (TC=100°C)
Pulsed Drain Current (IDM): 720 A
On-Resistance (RDS(ON)):
Max 3.0 mΩ @ VGS=10V, ID=100A
Gate Threshold Voltage (VGS(th)): 2.5–4.5 V (@ ID=250 μA)
Total Gate Charge (Qg): 158 nC (@ VDS=50V, ID=100A)
Input Capacitance (Ciss): 11,500 pF (@ VDS=50V, f=1MHz)
Switching Characteristics (VDD=50V, ID=100A, RG=1.6Ω):
td(on): 25 ns, tr: 75 ns
td(off): 89 ns, tf: 29 ns
Body Diode:
VSD ≤ 1.2 V @ IS=180A
trr: 75 ns, Qrr: 185 nC
Single-Pulse Avalanche Energy (EAS): 1800 mJ
Package: Likely TO-247 or similar high-power through-hole package (per mechanical drawing)
Power Dissipation (PD): 300 W (TC=25°C)
Thermal Resistance (RθJC): 0.5 °C/W
Junction Temperature Range: –55°C to +175°C
Reliability: 100% UIS tested, Pb-free
2. Key Usage Guidelines
(1) Gate Drive & Layout
Despite high Qg (158 nC), its excellent FOM (RDS(ON) × Qg) enables efficient operation up to 500 kHz.
Use a high-current gate driver and minimize gate loop inductance.
Tested with RG = 1.6 Ω—low RG is recommended, but optimize for EMI and ringing.
(2) Thermal Management
Ultra-low RθJC (0.5 °C/W) supports 300 W dissipation—mount on a large heatsink with thermal paste.
Monitor case temperature under continuous high-current operation to ensure TJ ≤ 175°C.
(3) Synchronous Rectification
Low VSD (1.2 V) and fast trr (75 ns) make it ideal for synchronous rectifiers in high-power buck converters.
Enables system efficiencies >98% in 48V–12V server VRMs.
(4) Avalanche Robustness
Exceptional EAS (1800 mJ) ensures reliability in inductive switching (e.g., motors, welders).
100% UIS testing guarantees avalanche survivability.
(5) Safe Operating Area (SOA)
Wide DC and pulsed SOA (Fig. 8) supports linear-mode applications (e.g., electronic loads).
Use 720 A IDM only under pulsed conditions (≤300 μs, ≤2% duty).
3. Typical Applications
48V–12V server VRMs and POL converters
Industrial motor drives (H-bridge) for AGVs/forklifts
Synchronous rectification in telecom/industrial PSUs
Battery energy storage system (BESS) switches
High-frequency inverters and welding power supplies
4. Summary
The HM018N10T sets a benchmark in high-current power switching with its 100V rating, 180A capability, and <3 mΩ RDS(ON). Leveraging Super Trench technology, it delivers unmatched efficiency and robustness. With proper drive, thermal, and layout design, it enables next-generation high-density, high-reliability power systems.
