The HM80N08B is HeroMicro an N-channel power MOSFET fabricated using advanced trench technology, offering high voltage rating, high current capability, and excellent switching performance. It is well-suited for motor drives, power converters, inverters, electric tools, and industrial control systems requiring robust and efficient power switching.
1. Key Specifications (from HM80N08B.pdf)
Drain-Source Voltage (VDS): 80 V
Continuous Drain Current (ID): Up to 80 A (derated with case temperature; see Fig. 10)
Pulsed Drain Current (IDM): 365 A (limited by body diode)
On-Resistance (RDS(ON)): Increases with junction temperature (see Fig. 8)
Switching Characteristics (VDD=50V, ID=60A, RG=4.7Ω):
Turn-on delay (td(ON)): 15 ns
Rise time (tr): 29 ns
Turn-off delay (td(OFF)): 25 ns
Fall time (tf): 18 ns
Total Gate Charge (QG): 37 nC (VDD=30V, ID=40A)
Body Diode Reverse Recovery Charge (Qrr): 57 nC (IF=60A, dI/dt=100 A/μs)
Package: TO-220AB (dimensions on p.4/5)
Thermal Limits: Max junction temperature TJ = 175°C; ID vs. case temperature shown in Fig. 10
2. Key Usage Guidelines
(1) Gate Drive Design
Drive with VGS = 10 V for full enhancement and minimal conduction loss.
Use a gate resistor (RG = 2–5 Ω) to control switching speed and suppress ringing. A dedicated MOSFET driver is recommended for high-frequency operation.
(2) Thermal Management
Mount the TO-220AB package on an adequate heatsink.
Per Fig. 10, ID ≈ 120 A at Tc = 25°C, but drops to ~60 A at Tc = 100°C.
Ensure TJ ≤ 175°C by calculating power dissipation and thermal resistance (RθJC).
(3) Body Diode Considerations
The intrinsic body diode supports freewheeling but has trr ≈ 50 ns.
In hard-switching or bridge topologies, reverse recovery may cause voltage spikes—consider dead-time optimization or external diodes.
(4) Safe Operating Area (SOA)
While pulsed current reaches 365 A, continuous operation is thermally limited.
Avoid prolonged operation in high-VDS/high-ID regions to prevent thermal runaway.
(5) PCB Layout Tips
Use wide, short power traces to minimize parasitic inductance.
Keep gate drive loop small and close to the MOSFET pins.
Ensure good thermal contact between the TO-220 tab and heatsink (use thermal paste).
3. Typical Applications
DC motor H-bridge drives
Power switches in electric tools
Industrial inverters and UPS systems
Medium-power DC-DC converters (e.g., 48V systems)
Battery charge/discharge control
4. Summary
The HM80N08B delivers a compelling combination of 80V blocking voltage, high current capability, fast switching, and robust TO-220AB packaging. With proper drive design, thermal management, and SOA adherence, it enables reliable and efficient power conversion in demanding industrial and consumer applications.
