The HYG035N06LS1C2 is HeroMicro an N-channel power MOSFET fabricated using advanced high-cell-density trench technology, designed for high-current, high-efficiency power conversion applications. Its key strengths include ultra-low on-resistance (RDS(ON) < 3 mΩ @ VGS=10V), low gate charge (Qg), and excellent thermal performance. It is ideal for electric tools, battery management systems (BMS), motor drives, DC-DC converters, server power supplies, and renewable energy systems requiring high power density.
1. Device Overview
Type: N-Channel Enhancement-Mode MOSFET
Package: DFN 5×6-8 (leadless, with exposed thermal pad)
Key Electrical Ratings (TC = 25°C):
Typ. 2.5 mΩ (Max 3 mΩ) @ VGS = 10 V, ID = 20 A
Typ. 3 mΩ (Max 4.5 mΩ) @ VGS = 4.5 V, ID = 10 A
Drain-Source Voltage (VDS): 60 V
Continuous Drain Current (ID): 130 A
Pulsed Drain Current (IDM): 390 A
On-Resistance (RDS(ON)):
Gate Threshold Voltage (VGS(th)): 1–2.5 V
Total Gate Charge (Qg): 66.1 nC @ VGS = 10 V, VDS = 30 V
Input Capacitance (Ciss): 5377 pF @ VDS = 25 V
Power Dissipation (PD): 140 W
Thermal Resistance (RθJC): 0.89 °C/W (junction-to-case)
Operating Junction Temperature: –55°C to +150°C
2. Key Usage Guidelines
(1) Gate Drive Optimization
Use VGS = 10 V for minimum RDS(ON) and conduction loss.
At VGS = 4.5 V, RDS(ON) remains very low (<4.5 mΩ), compatible with 5 V logic systems.
Keep gate drive traces short and minimize loop inductance to reduce ringing and EMI.
(2) Thermal Management & PCB Layout
The exposed thermal pad must be soldered to a copper pour on the PCB.
Use ≥2 cm² of copper area under the pad and connect it to inner/ground layers via multiple thermal vias to maximize heat dissipation.
With RθJC = 0.89 °C/W, the device has excellent intrinsic thermal performance, but system-level thermal design must ensure TJ ≤ 150°C.
(3) Switching Performance
Fast switching: td(on) = 22.5 ns, td(off) = 80.3 ns (VDD=30V, ID=25A, RG=2Ω).
Low Miller charge (Qgd = 10.9 nC) reduces voltage overshoot and cross-conduction risk.
For high-frequency operation (>100 kHz), use a dedicated MOSFET driver and optimize RG (typically 1–5 Ω) to balance speed and EMI.
(4) Body Diode & Reverse Recovery
Body diode forward voltage (VSD) ≤ 1.3 V (@ IS = 20 A).
Reverse recovery time (Trr): 68.3 ns (@ IS = 25 A, di/dt = 100 A/μs).
The body diode supports freewheeling in bridge or synchronous rectifier topologies, but its recovery behavior may cause losses—consider adding a fast recovery diode if needed.
(5) Safe Operating Area (SOA) & Protection
Although rated for 130 A continuous current, actual capability depends on PCB thermal design—perform thermal derating.
Avoid prolonged operation at high VDS and high ID simultaneously to prevent thermal runaway.
Add TVS diodes or RC snubbers at the input to suppress voltage spikes.
3. Typical Applications
Electric tools and drone ESCs (Electronic Speed Controllers)
Main power switches in EV/ESS battery management systems (BMS)
Synchronous rectification in server and telecom power supplies
High-current buck/boost DC-DC converters
Industrial motor drives and inverters
4. Summary
The HYG035N06LS1C2 stands out with its 60 V rating, 130 A current capability, <3 mΩ ultra-low RDS(ON), and high thermal efficiency in a compact DFN package. By optimizing gate drive, implementing robust PCB thermal design, and adhering to SOA limits, engineers can leverage this device to build highly efficient, reliable, and space-saving power systems for demanding modern applications.
