The IRFH8330M is HeroMicro an N-channel enhancement-mode power MOSFET fabricated using advanced trench technology, featuring ultra-low on-resistance (RDS(ON)), low gate charge, and excellent thermal performance. Designed for high-efficiency, high-current applications, it is ideal for synchronous rectification, DC-DC converters, load switching, battery management systems (BMS), and motor drives. Housed in a compact DFN5x6-8 surface-mount package, it offers superior heat dissipation and is a core component in high-density, high-performance power systems.
1. Device Overview
Channel Type: N-Channel
Package: DFN5x6-8, 8-pin, RoHS compliant
Key Electrical Parameters:
3.6 mΩ (typical) @ VGS = 10 V, ID = 30 A
5 mΩ (max) @ VGS = 10 V, ID = 30 A
5.3 mΩ (typical) @ VGS = 4.5 V, ID = 20 A
7 mΩ (max) @ VGS = 4.5 V, ID = 20 A
Drain-Source Voltage (VDS): 30 V
Continuous Drain Current (ID): 80 A (TC = 25°C)
Pulsed Drain Current (IDM): 280 A
Maximum Power Dissipation (PD): 46 W
On-Resistance (RDS(ON)):
Gate-Source Voltage (VGS): ±20 V (maximum)
Maximum Junction Temperature (TJ): 150°C
Thermal Resistance (RθJC): 2.72 °C/W (junction-to-case)
2. Key Usage Guidelines
(1) Gate Drive Design
Use VGS = 10 V for minimum RDS(ON).
The device maintains low RDS(ON) at VGS = 4.5 V (typ. 5.3 mΩ), supporting 5V logic-level drive, suitable for direct control by PWM controllers or logic ICs.
Input capacitance (Ciss) is 1695 pF, and reverse transfer capacitance (Crss) is 205 pF, enabling fast switching with low losses.
Use a low gate resistance (e.g., 4.7–10 Ω) to optimize switching waveforms and reduce ringing and EMI.
(2) Thermal Management
RθJC = 2.72 °C/W indicates excellent thermal conductivity between junction and case.
Maximum power dissipation is 46 W, but thermal performance depends on PCB design. Use large copper areas on the PCB for the thermal pad, connected via multiple vias to internal/ground layers to enhance heat transfer.
Power loss consists of conduction loss (ID² × RDS(ON)) and switching loss. Optimize gate drive in high-frequency applications.
Derate current under high ambient temperatures to keep junction temperature below 150°C.
(3) Body Diode Characteristics
Integrated body diode supports robust freewheeling:
Source-Drain Forward Voltage (VSD): ≤ 1.2 V (@ IS = 90 A, VGS = 0 V)
Reverse Recovery Time (trr): 78 ns (@ IF = 90 A, di/dt = 100 A/μs)
Reverse Recovery Charge (Qrr): 51 nC
Suitable for inductive loads, but reverse recovery may cause voltage spikes. Consider adding a fast recovery diode or RC snubber if necessary.
(4) Safe Operating Area (SOA)
Refer to the SOA curve (Figure 8) to ensure operation remains within thermal and current limits.
Avoid switching high currents at high voltages to prevent secondary breakdown.
(5) ESD Protection and Assembly
MOSFETs are ESD-sensitive. Use ESD-safe handling procedures.
The DFN package is leadless; follow standard reflow soldering profiles to ensure reliable solder joints and avoid thermal stress.
3. Typical Applications
Synchronous Rectification in DC-DC Converters
Multiphase Voltage Regulator Modules (VRM)
Battery Management Systems (BMS)
Motor Drives and H-Bridge Circuits
Server and Telecom Power Supplies
4. Summary
The IRFH8330M offers a powerful combination of 30 V blocking voltage, 80 A continuous current, 5 mΩ ultra-low RDS(ON), and a compact DFN package, making it an ideal choice for high-efficiency, high-density power designs. By properly designing the gate drive, optimizing PCB thermal layout, and adhering to SOA limits, engineers can fully leverage its capabilities for reliable and efficient system performance. It is a cornerstone device in modern high-performance electronics.
