The MSN4688 is HeroMicro a complementary power MOSFET integrating both N-channel and P-channel transistors in a single package. Fabricated using advanced trench technology, it offers excellent on-resistance (RDS(ON)) and low gate charge, making it ideal for H-bridge, inverters, DC-DC converters, and load switching applications. It enables efficient bidirectional power control with simplified circuit design and improved system efficiency.
1. Device Overview
Type: Complementary Enhancement Mode MOSFET (N+P Channel)
Package: SOP-8D
Key Electrical Parameters:
| Parameter | Symbol | N-Channel | P-Channel | Units |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | -60 | V |
| Gate-Source Voltage | VGS | ±20 | ±20 | V |
| Continuous Drain Current (TA=25°C) | ID | 4.5 | -3.6 | A |
| Continuous Drain Current (TA=70°C) | ID | 3.6 | -3.0 | A |
| Pulsed Drain Current | IDM | 20 | -20 | A |
| Power Dissipation (TA=25°C) | PD | 2 | 2 | W |
| On-Resistance (TJ=125°C) | RDS(ON) | < 77 mΩ (@4.5V) | < 93 mΩ (@-10V) | mΩ |
Thermal Characteristics:
Junction-to-Ambient (RθJA): 62.5 °C/W (transient), 110 °C/W (steady-state)
Junction-to-Lead (RθJL): 60 °C/W (N-ch), 40 °C/W (P-ch)
2. Key Usage Guidelines
(1) Gate Drive Design
N-Channel: Use VGS = 10 V or 4.5 V for full enhancement. RDS(ON) < 56 mΩ @ VGS = 10 V.
P-Channel: Apply negative gate voltage (e.g., VGS = -10 V). RDS(ON) ≈ 126 mΩ @ VGS = -4.5 V.
Input capacitance Ciss ≈ 930–1120 pF (@ VDS = ±30 V). Use a gate resistor (10–22 Ω) to optimize switching waveforms and suppress ringing.
(2) Thermal Management
Maximum power dissipation: 2 W at TA=25°C, derated to 1.28 W at TA=70°C.
Use large copper areas on the PCB for drain and source pads, connected via vias to internal ground planes for better heat dissipation.
Derate current under high ambient temperatures to keep junction temperature below 150°C.
(3) Switching Performance
Switching Times (P-Channel, RL=9.4Ω, RGEN=3Ω):
Turn-On Delay (tD(on)): 8–12 ns
Rise Time (tr): 3.8–7.5 ns
Turn-Off Delay (tD(off)): 31.5–48 ns
Fall Time (tf): 7.5–15 ns
Low gate charge (Qg(10V) = 16–20 nC) enables fast switching for high-frequency PWM control.
(4) Body Diode and Reverse Recovery
P-channel body diode supports freewheeling:
Forward Voltage (VSD): -0.73 to -1 V (@ IS = -1 A)
Reverse Recovery Time (trr): 27–35 ns
Reverse Recovery Charge (Qrr): 32 nC
Suitable for inductive loads, but reverse recovery may cause voltage spikes.
(5) Safe Operating Area (SOA)
Refer to the SOA curve in the datasheet to avoid thermal overstress.
Avoid switching high currents at high voltages.
(6) ESD Protection
MOSFETs are ESD-sensitive. Use ESD-safe handling procedures.
3. Typical Applications
H-Bridge Motor Drivers
Synchronous Rectification in DC-DC Converters
Power Switching and Load Control
Battery Management Systems (BMS)
Inverters and UPS Systems
4. Summary
The MSN4688 delivers high integration and efficiency with its complementary N+P channel design, low RDS(ON), and low gate charge. By properly designing the gate drive, optimizing thermal layout, and adhering to SOA limits, engineers can fully leverage its performance for reliable and compact power system designs.
